Dalianda launches 1KW DCDC power module solution based on InnoGaN products
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Dalianda launches 1KW DCDC power module solution based on InnoGaN products

Posted Date: 2024-01-19

January 18, 2024a leading semiconductor component distributor dedicated to the Asia-Pacific market---Dalianda Holdings announced that itsQuandingroll out1KW DC/DC power module solution based on Innoscience InnoGaN ISG3201 and INN040LA015A devices.

With the gradual deepening of the "dual carbon" concept, intelligence and low-carbonization have become the two "deterministic" development trends of data centers. According to a research survey by a well-known organization, the overall power conversion energy efficiency of existing data centers using Si solutions is approximately 75%, while the use of GaN devices can increase the energy efficiency to 87.5%. Among them, the DC/DC 48V-12V link plays an important role in the entire link.

In this context, Dalian Da Quanding launched a 1KW DC/DC power module solution based on Innoscience InnoGaN ISG3201 and INN040LA015A devices. It uses the small parasitic junction capacitance of gallium nitride and cooperates with the magnetic integration solution to increase the switching frequency to 1MHz. , with high efficiency and high power density characteristics.

Figure 2 - Scenario application diagram of Dalianda Quanding’s 1KW DC/DC power module solution based on Innoscience products

This solution uses a full-bridge LLC DCX topology with a fixed transformation ratio of 4:1, supports 48V input to 12V output, and integrates two 100V InnoGaN ISG3201 and eight INN040LA015A low-voltage GaN chips from Innoscience. ISG3201 is a 100V voltage-resistant half-bridge gallium nitride package chip. It integrates the driver internally to optimize the drive loop and power loop, significantly reducing parasitic inductance and switching spikes, and further improving the overall performance and reliability of the 1KW 48 power module system. sex.

Not only that, the chip also has independent high-side and low-side PWM signal inputs, and supports TTL level driving. It can be driven and controlled by a dedicated controller or a general-purpose MCU. It is an ideal power supply for data center modules, motor drivers, and class D power amplifiers. The best choice for 48V power systems.

Through the efficiency test, under the condition of input voltage 230Vac/264Vac, the maximum efficiency of this solution can reach 96.5%, which can easily meet the 80 Plus titanium level energy efficiency standard. INN040LA015A is an enhanced nitride with a voltage resistance of 40V and a conduction resistance of 1.5mΩ. Gallium transistor, which is packaged in FCLGA 5*4, is small in size, has extremely low gate charge and on-resistance, and has zero reverse recovery charge. It can not only reduce the floor area, but also have a higher switching frequency, which can Provides higher dynamic response to the system.

Figure 3-Block diagram of Dalianda Quanding’s 1KW DC/DC power module solution based on Innoscience products

This solution can bring the advantages of high power density and low loss to the data center with a size of 39mm×26mm×7.5mm. In actual tests, when the input voltage is 48V and the output is 12V/30A, the peak efficiency can reach 98%; when the input voltage is 48V and the output is 12V/85A, the full-load efficiency can reach 96.29%. In the future, as data centers develop in a more efficient and smarter direction, gallium nitride will also play a key role in the important green revolution. In this process, Dalian University and Innoscience will continue to develop solutions with gallium nitride as the core. Solutions to empower the digital era.

▌Core technology advantages

High efficiency: 98%@48V-12V/30A;

High frequency: 1MHz;

High power density: 2150W/in3;

Ultra-small size: 39mm×26mm×7.5mm.

▌Project specifications

Size: 39mm×26mm×7.5mm;

efficiency:

▷ Peak efficiency: 98%@12V/30A;

▷ Full load efficiency: 96.29%@12V/85A;

Power density: 2150W/in3.








Review Editor: Liu Qing


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