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DigiKey signs Cambridge GaN Devices

DigiKey signs Cambridge GaN Devices

Posted Date: 2023-06-21

“This settlement is a big step for CGD as we're scaling-up the enterprise and constructing a GaN ecosystem that can assist engineers discover and utilise the advantages of ICeGaN for prime voltage energy conversion,” says CGD chief comnercial officer Andrea Bricconi.

DigiKey signs Cambridge GaN Devices

“DigiKey is at all times seeking to fill the gaps for our buyer base,” says DigiKey vp Missy Corridor, “and the addition of CGD to our provider neighborhood is yet one more hole stuffed and yet one more step in direction of nice innovation.”

Not too long ago, CGD launched its 650 V H2 collection ICeGaN gallium nitride HEMT household. The brand new elements cut back design complexity as they are often pushed utilizing commercially-available {industry} gate drivers.

By way of effectivity, ICeGaN HEMTs function a QG that's 10x decrease than silicon elements and a QOSS that's 5x much less. This enormously reduces switching losses, enabling industry-leading effectivity figures that lead to reductions in system measurement, weight and price.

H2 Sequence ICeGaN HEMTs additionally tackle reliability and ruggedness considerations by using CGD’s sensible gate interface that just about eliminates typical e-mode GaN weaknesses.

Units function improved over-voltage robustness, increased noise-immune threshold, dV/dt suppression and ESD safety.

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