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DigiKey signs Cambridge GaN Devices

DigiKey signs Cambridge GaN Devices

Posted Date: 2023-06-21

“This settlement is a major step for CGD as we're scaling-up the enterprise and constructing a GaN ecosystem that can assist engineers discover and utilise the advantages of ICeGaN for top voltage energy conversion,” says CGD chief comnercial officer Andrea Bricconi.

DigiKey signs Cambridge GaN Devices

“DigiKey is at all times trying to fill the gaps for our buyer base,” says DigiKey vp Missy Corridor, “and the addition of CGD to our provider group is yet one more hole stuffed and yet one more step in the direction of nice innovation.”

Lately, CGD launched its 650 V H2 collection ICeGaN gallium nitride HEMT household. The brand new elements scale back design complexity as they are often pushed utilizing commercially-available {industry} gate drivers.

When it comes to effectivity, ICeGaN HEMTs function a QG that's 10x decrease than silicon elements and a QOSS that's 5x much less. This drastically reduces switching losses, enabling industry-leading effectivity figures that lead to reductions in system measurement, weight and value.

H2 Collection ICeGaN HEMTs additionally deal with reliability and ruggedness considerations by using CGD’s sensible gate interface that just about eliminates typical e-mode GaN weaknesses.

Units function improved over-voltage robustness, larger noise-immune threshold, dV/dt suppression and ESD safety.

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