Diodes’ automotive SiC MOSFET improves efficiency in automotive subsystems
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Diodes’ automotive SiC MOSFET improves efficiency in automotive subsystems

Posted Date: 2023-06-29

Jun 29, 2023 /SemiMedia/ — Diodes Included not too long ago introduced an additional enhancement of its wide-bandgap product providing with the discharge of the DMWSH120H90SM4Q and DMWSH120H28SM4Q automotive-compliant Silicon Carbide (SiC) MOSFETs. These N-channel MOSFETs reply to the growing market demand for SiC options that allow higher effectivity and better energy density in electrical and hybrid-electric automobile (EV/HEV) automotive subsystems like battery chargers, on-board chargers (OBC), high-efficiency DC-DC converters, motor drivers, and traction inverters.

The DMWSH120H90SM4Q operates safely and reliably as much as 1200VDS with a gate-source voltage (Vgs) of +15/-4V and has an RDS(ON) of 75mΩ (typical) at 15Vgs. This machine is designed for OBCs, automotive motor drivers, DC-DC converters in EV/HEV, and battery charging programs.

The DMWSH120H28SM4Q operates at as much as 1200VDS, +15/-4Vgs, and has a decrease RDS(ON) of 20 mΩ (typical) at 15Vgs. This mosfet has been designed for motor drivers, EV traction inverters, and DC-DC converters in different EV/HEV subsystems. Low RDS(ON) allows these MOSFETs to run cooler in purposes that require excessive energy density.

Each merchandise have low thermal conductivity (RθJC=0.6°C/W), enabling drain currents as much as 40A within the DMWSH120H90SM4Q and 100A within the DMWSH120H28SM4Q. Additionally they have quick intrinsic and strong physique diodes with low reverse restoration cost (Qrr) of 108.52nC within the DMWSH120H90SM4Q and 317.93nC within the DMWSH120H28SM4Q. This allows them to carry out quick switching with decreased energy losses.

Through the use of the planar manufacturing course of, Diodes has created new MOSFETs that provide extra strong and dependable efficiency in automotive purposes—and with elevated drain present, breakdown voltage, junction temperature, and energy rings as in comparison with beforehand launched variations. The units can be found in a TO247-4 (Sort WH) package deal, which provides a further Kelvin sense pin. This may be related to the supply to optimize switching efficiency, enabling even larger energy densities.

The DMWSH120H90SM4Q and DMWSH120H28SM4Q are AEC-Q101 certified, manufactured in IATF 16949 licensed services, and help PPAP documentation. The DMWSH120H90SM4Q is on the market at $18 in 1,000 piece portions, and the DMWSH120H28SM4Q is on the market at $38 in 1,000 piece portions.