FUJI 1MBI2400U4D-170 IGBT Module

FUJI 1MBI2400U4D-170 is a high-performance IGBT (Insulated Gate Bipolar Transistor) module that provides wonderful switching capabilities and is appropriate for varied functions.

Key Options:

1. Excessive-Velocity Switching: The module is designed to realize quick switching occasions, permitting for environment friendly and exact management of energy move.
2. voltage Drive: It has a voltage-driven gate, which simplifies the management circuitry and enhances the module’s compatibility with totally different driving techniques.
3. Low Inductance Module Construction: The module is constructed with a low inductance construction, minimizing parasitic inductance and bettering switching efficiency.

Functions:

1. Inverter for Motor Drive: The module is appropriate for motor drive functions the place excessive energy and environment friendly switching are required.
2. AC and DC Servo Drive Amplifier: It may be utilized in servo drive amplifiers for correct and responsive management of AC and DC servo motors.
3. Uninterruptible Energy Provide: The module could be built-in into UPS techniques to offer dependable and environment friendly energy backup options.
4. Industrial Machines, akin to Welding Machines: It's appropriate for industrial machines that require excessive energy switching, akin to welding machines.

Most Scores and Traits:

• Collector-Emitter Voltage (Vces): 1700V
• Gate-Emitter Voltage (VGES): ±20V
• Steady Collector Present (IC) at Tc=80°C: 2400A
• Collector Present (Icp) for 1ms at Tc=25°C: 4800A
• Collector Energy Dissipation (Computer): 14700W
• Isolation Voltage (VIsol) (AC 1 minute): 3400V
• Working Junction Temperature (Tj): +150°C
• Storage Temperature (Tstg): -40 to +125°C
• Mounting Screw Torque: 5.75 * 2 N·m