Fuji 1MBI800U4B-120 IGBT Module

The relevant class for the IGBT-module 1MBI800U4B-120 is “Energy Semiconductor Module” or “IGBT Module.”
The important thing specs and storage/transportation notes for the module:
Collector-Emitter Voltage (VCE): 1200V
Gate-Emitter Voltage (VGES): ±20V (at Tc = 25°C)
Steady Collector Present (IC): 800A (at Tc = 80°C)
Pulse Collector Present (ICP): 2400A (1 ms, at Tc = 25°C)
Collector Energy Dissipation (Laptop): 4805W
Junction Temperature (Tj): +150°C
Storage Temperature (Tstg): -40°C to +125°C
Isolation Voltage (Viso): 2500V AC for 1 minute (between terminals and copper base)
Screw Mounting Torque: 4.5Nm
Terminals Torque: 1.7Nm
Storage and Transportation Notes:
Retailer the module at a typical temperature of 5 to 35°C and humidity of 45 to 75%.
Maintain the modules in a spot with minimal temperature modifications to keep away from condensation on the module floor.
Keep away from publicity to corrosive gases and mud.
Stop extreme exterior drive on the module.
Retailer modules with unprocessed terminals.
Don't drop or topic the modules to shocks throughout dealing with.