Fuji 2DI75D-100 IGBT Module

The Fuji 2DI75D-100 is a high-power transistor module manufactured by Fuji Electrical Co., Ltd. It’s designed for demanding switching purposes and boasts a most collector present of 75 amperes and a most collector-emitter voltage of 1000 volts.

This module (2DI75D-100) integrates two insulated-gate bipolar transistors (IGBTs) together with a diode, all mounted on a single substrate.

The Fuji 2DI75D-100 finds widespread software in industrial settings like motor drives, energy provides, and welding tools. Its sturdy energy dealing with capability and compact kind issue make it significantly interesting for high-density energy electronics designs.

Key Specs:

• Producer Half Quantity: #2DI75D-100
• Bundle Description: FLANGE MOUNT, R-PUFM-X7
• Producer: Fuji Electrical Co Ltd
• Collector Present-Max (IC): 75 A
• Collector-Emitter Voltage-Max: 1000 V
• Configuration: COMPLEX
• DC Present Achieve-Min (hFE): 100
• Fall Time-Max (tf): 3000 ns
• JESD-30 Code: R-PUFM-X7
• Variety of Parts: 2
• Variety of Terminals: 7
• Bundle Physique Materials: PLASTIC/EPOXY
• Bundle Form: RECTANGULAR
• Bundle Fashion: FLANGE MOUNT
• Polarity/Channel Sort: NPN
• Energy Dissipation Ambient-Max: 500 W
• Energy Dissipation-Max (Abs): 500 W
• Rise Time-Max (tr): 2500 ns
• Subcategory: BIP Normal Goal Energy
• Floor Mount: NO
• Terminal Place: UPPER
• Transistor Ingredient Materials: SILICON
• Flip-off Time-Max (toff): 18000 ns
• Flip-on Time-Max (ton): 2500 ns