Fuji 2MBI300N-120 IGBT Module

The 2MBI300N-120 is an influence module manufactured by Fuji Electrical. Listed here are the specs for the 2MBI300N-120:
Producer: Fuji Electrical
Module Kind: IGBT (Insulated Gate Bipolar Transistor) Energy Module
Configuration: Twin IGBT
Most Collector-Emitter voltage (Vces): 1200V
Collector Present (IC): 300A
Most Collector Energy Dissipation (Computer): 800W
Gate-Emitter voltage (Vges): ±20V
Working Junction Temperature (Tj): -40°C to +150°C
Storage Temperature (Tstg): -40°C to +125°C
Mounting Model: Screw Terminal
RoHS Compliant: Sure
The 2MBI300N-120 energy module contains a twin IGBT configuration, which consists of two IGBTs in a single module. This configuration permits for greater energy dealing with and elevated effectivity in energy electronics functions.
The module has a most collector-emitter voltage (Vces) score of 1200V, making it appropriate for functions that require excessive voltage switching.
The collector present (IC) is rated at 300A, indicating the utmost present the module can deal with throughout operation.
The utmost collector energy dissipation (Computer) is specified as 800W, indicating the quantity of energy the module can safely dissipate with out exceeding its thermal limits.
The gate-emitter voltage (Vges) is specified as ±20V, representing the voltage vary used to manage the IGBTs.
The 2MBI300N-120 energy module makes use of a screw terminal for straightforward connection and set up.
Moreover, the module is RoHS compliant, that means it meets the restrictions on hazardous substances set forth by the Restriction of Hazardous Substances directive.