Fuji 2MBI75N-120 IGBT Module

The 2MBI75N-120 is an IGBT (Insulated Gate Bipolar Transistor) module designed for numerous purposes in energy electronics and motor drives. It options high-speed switching and voltage drive, making it appropriate for purposes requiring environment friendly energy conversion.

Key Options:

• Excessive-speed switching
• Voltage drive
• Low inductance module construction
• Low VCE(sat) (Voltage throughout Collector and Emitter in saturation)
• Compact package deal
• P.C. board mount (Printed Circuit board mount)
• Converter diode bridge
• Dynamic brake circuit

Purposes:

• Inverter for motor drive
• AC and DC servo drive amplifier
• Uninterruptible energy provide (UPS)

Most Rankings and Traits:

(Absolute most scores, Tc=25°C until in any other case specified)

• Collector-Emitter voltage (Vces): 600V
• Gate-Emitter voltage (VGES): ±20V
• Collector present (Ic): 400A
• Collector present (Icp) (pulse): 800A
• Collector energy dissipation (Laptop): 1270W
• Collector-Emitter voltage (VCES): 2500V
• Working junction temperature (Tj): +150°C
• Storage temperature (Tstg): -40 to +125°C

The 2MBI75N-120 is a 2-in-1 IGBT module with a voltage score of 1200 volts and a present score of 75 amps. It's generally utilized in industrial machines, reminiscent of welding machines, the place high-power switching and voltage management are required. The module’s compact package deal and low inductance module construction make it appropriate for numerous energy electronics purposes.