Fuji 6MBP50RS120 IGBT Module
Fuji 6MBP50RS120 IGBT Module
The 6MBP50RS120 is an influence module designed for industrial and high-power purposes. Listed here are a few of its options:
Excessive voltage and present ranking
Low energy loss and excessive effectivity
Constructed-in safety circuitry for overvoltage, overcurrent, and overheating
Excessive-speed switching functionality
Remoted base plate for improved security
Compact design with a regular housing
RoHS compliant
Listed here are the utmost scores and traits for the 6MBP50RS120:
Collector-Emitter voltage (Vces): 1200V
Gate-Emitter voltage (VGES): ±20V
Collector present (IC): 50A
Collector present (Icp): 100A
Collector energy dissipation (Laptop): 330W
Collector-Emitter voltage (VCES): 2500V
Working junction temperature (Tj): -40 to +150°C
Storage temperature (Tstg): -40 to +125°C
Mounting screw torque: 3.5 N·m
Weight: 240g
These specs present details about the utmost voltage, present, energy dissipation, and temperature limits for the 6MBP50RS120 energy module.
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