FUJI 7MBI40N-12 New IGBT Module

The FUJI FUJI7MBI40N-12 is a power-module that consists seven insulated gate bipolar transistors. Transistor (IGBT) chips connected in parallel configuration. It can handle a maximum collector/emitter voltage The maximum collector current is 40A at 1200V.
The FUJI FUJI7MBI40N-12 module is commonly used for high-power applications, such as motor drive, power supplies, or welding equipment. It comes in a flat-base, 62mm wide package.
The FUJI 7MBI40N-12 features include:
Brake Chopper Included: The module includes a brake chopper feature.
Square RBSOA : It has a square shaped reverse bias safe operation area.
Low Saturation voltageThe module shows low saturation voltage while in operation.
Overcurrent Limiting: It has a overcurrent limiter that can handle up to 4 or 5 times the rated voltage.
Here are the maximum ratings and characteristics of the module (assuming a temperature of 25°C, unless otherwise specified):
Collector-Emitter voltage (Vces) : 1200V
Gate-Emitter Voltage (VGES): ±20V
Collector CurrentIC): 40A
Collector Current Peak (Icp), 80A
Collector Power Dissipation: 320W
Collector-Emitter Voltage: 2500V
Operating Junction Temperature (Tj): +150°C
Storage Temperature (Tstg): -40°C to +125°C
Mounting Screw Torque: 3.5*1 N·m