Fuji 7MBP150RA060-01 IGBT Module

The Fuji 7MBP150RA060-01 is an IGBT (Insulated Gate Bipolar Transistor) module designed for high-performance energy functions. Listed here are the important thing options, specs, and particulars of the module:

Options:

• Temperature Safety: The module gives temperature safety by instantly detecting the junction temperature of the IGBTs. This characteristic helps stop overheating and enhances the reliability of the module.
• Low Energy Loss and Gentle Switching: The module is designed for low energy loss and delicate switching operations, contributing to vitality effectivity and diminished stress on elements.
• Appropriate with IPM-N Collection: The module is appropriate with current IPM-N collection packages, making it appropriate for alternative and integration into numerous programs.
• Excessive Efficiency and Reliability: The IGBTs within the module are designed for top efficiency and reliability, with built-in overheating safety mechanisms.
• Simplified Management Circuit: The module’s built-in management circuit has a diminished variety of components, enhancing reliability and simplifying the general design.

Specs:

• Collector-Emitter Voltage Vces: 600V
• Gate-Emitter Voltage VGES: ±20V
• Collector Present Ic: 150A
• Collector Present Icp: 300A
• Collector Energy Dissipation Laptop: 595W
• Collector-Emitter Voltage VCES: 2500V
• Working Junction Temperature Tj: +150°C
• Storage Temperature Tstg: -40 to +125°C
• Mounting Screw Torque: 3.5 * 6 N·m