Fuji 7MBR35U4P120 IGBT Module

The Fuji 7MBR35U4P120 is an IGBT (Insulated Gate Bipolar Transistor) module with the next specs:

Options:

• Low VCE(sat)
• Compact Bundle
• P.C.Board Mount Module
• converter Diode Bridge Dynamic Brake circuit
• RoHS compliant product

Purposes:

• Inverter for Motor Drive
• AC and DC Servo Drive Amplifier
• Uninterruptible Energy Provide

Most Scores:

• Collector-Emitter voltage Vces: 1200V
• Gate-Emitter voltage VGES: ±20V
• Collector Present IC Steady Tc=100°C: 35A
• Collector Present Icp 1ms Tc=80°C: 70A
• Collector Energy Dissipation Laptop: 210W
• Isolation Voltage VIsol (AC 1 minute): 2500V
• Working Junction Temperature Tj: +150°C
• Storage Temperature Tstg: -40 to +125°C
• Mounting Screw Torque: 3.5 *3 N·m

The module is designed with a low VCE(sat) attribute, making it appropriate for high-efficiency purposes. It has a compact package deal and may be mounted on a printed circuit board (P.C.Board). The module additionally features a converter diode bridge dynamic brake circuit. It's compliant with the RoHS directive.

The utmost scores specify the utmost voltage, present, energy dissipation, and temperature limits for protected operation. The module has a excessive collector-emitter voltage score of 1200V, a most steady collector present of 35A, and a most collector energy dissipation of 210W. It's able to working at temperatures as much as +150°C. The isolation voltage is specified as 2500V (AC for 1 minute).