GaN Power Transistors: Optimizing Fast Switching and Efficiency

GaN power transistors supply distinctive advantages like excessive transconductance and large bandwidth, enabling fast switching with minimal losses, even in demanding functions. Nevertheless, the pace of those switches, together with the ensuing excessive di/dt and dv/dt, poses design challenges for the primary energy loop, gate drive, and related circuits.

These challenges lengthen past standalone transistors and drivers, impacting methods with co-packaged or built-in gate drive features. This seminar offers insights into numerous HV GaN energy transistor varieties, efficient gate drive strategies, and techniques for isolating and powering gate drive circuits.

The seminar additionally addresses the interaction between quick switching and circuit/PCB parasitic impedances. It delves into potential points and their decision, shedding gentle on the origin and impression of parasitic impedance. Moreover, it covers optimizing loop inductances and using copper planes and shields to information currents precisely.

By understanding and adhering to those tips, you possibly can improve the success of your GaN designs and harness the ability of those superior transistors successfully.

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