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Supreme for constructing ultra-low-power precision high-side present sensing circuits are…

Supreme for constructing ultra-low-power precision high-side present sensing circuits are…

Posted Date: 2023-06-19

Precision microamp-level high-side present measurements require a low-value sense Resistor and a low-offset amplifier. With a most enter offset voltage of solely 5 µV and only one.4 µA of present consumption, the LTC2063 zero-drift amplifier is right for constructing an entire ultra-low energy precision high-side present sense circuit (proven in Determine 1).

Precision microamp-level high-side present measurements require a low-value sense resistor and a low-offset amplifier. With a most enter offset voltage of solely 5 µV and only one.4 µA of present consumption, the LTC2063 zero-drift amplifier is right for constructing an entire ultra-low energy precision high-side present sense circuit (proven in Determine 1).

Ideal for building ultra-low-power precision high-side current sensing circuits are…
Determine 1. Precision high-side present sense circuit primarily based on the LTC2063 zero-drift amplifier.

The circuit requires solely 2.3 µA to 280 µA of provide present to sense a large dynamic vary of 100 µA to 250 mA. The very low offset voltage of the LTC2063 permits the circuit to work with shunt resistors as little as 100mΩ, leading to a most shunt voltage restrict of solely 25 mV. This could tremendously scale back the facility loss on the shunt resistor and tremendously improve the facility obtainable to the load. The rail-to-rail enter of the LTC2063 permits the circuit to function at very small load currents with the enter widespread mode virtually precisely on the provision rails. The LTC2063’s built-in EMI filter protects the gadget from RF interference below excessive noise situations.

For a given sense present, the voltage output of this circuit is:

Ideal for building ultra-low-power precision high-side current sensing circuits are…

zero

A key metric for a current-sense resolution is the zero level, or the output-referred-to-input equal error present that outcomes when no sense present is current. The zero is often the amplifier’s enter offset voltage divided by RSENSEDetermine. The low enter offset voltage of the LTC2063 is 1 µV typical, 5 µV most, and the low enter bias and offset currents are 1 pA to three pA typical, leading to a typical input-referred zero error present of solely 10 µA ( 1 µV/0.1 Ω), 50 µA (5 µV/0.1 Ω) most. This low error permits the detection circuit to keep up its linearity all the way down to the minimal present (100 µA) in its specified vary, with out lack of decision leading to a set offset worth within the low vary leading to linearity flattened (as proven in Determine 2). The ensuing enter present versus output voltage curve is linear over the whole present sensing vary.

Ideal for building ultra-low-power precision high-side current sensing circuits are…
Determine 2. No Mounted Offset Worth on Low Facet, ISENSEMay be as little as 100 µA.

One other supply of zero error is the drain present or IDSS of the output PMOS at zero gate voltage, i.e. the PMOS is nominally off (|VGS| = 0) exists at a non-zero VDSparasitic currents on. with excessive IDSSleakage present of the mosfet within the absence of ISENSEwill produce a non-zero optimistic V whenOUTworth.

The Transistor used on this design is Infineon’s BSP322P, which operates at |VDS| = I at 100 VDSS The higher restrict is 1 µA. Typical I of the BSP322P on this softwareDSS To make an affordable estimate, at room temperature and VDS=

Precision microamp-level high-side present measurements require a low-value sense resistor and a low-offset amplifier. With a most enter offset voltage of solely 5 µV and only one.4 µA of present consumption, the LTC2063 zero-drift amplifier is right for constructing an entire ultra-low energy precision high-side present sense circuit (proven in Determine 1).

Ideal for building ultra-low-power precision high-side current sensing circuits are…
Determine 1. Precision high-side present sense circuit primarily based on the LTC2063 zero-drift amplifier.

The circuit requires solely 2.3 µA to 280 µA of provide present to sense a large dynamic vary of 100 µA to 250 mA. The very low offset voltage of the LTC2063 permits the circuit to work with shunt resistors as little as 100mΩ, leading to a most shunt voltage restrict of solely 25 mV. This could tremendously scale back the facility loss on the shunt resistor and tremendously improve the facility obtainable to the load. The rail-to-rail enter of the LTC2063 permits the circuit to function at very small load currents with the enter widespread mode virtually precisely on the provision rails. The LTC2063’s built-in EMI filter protects the gadget from RF interference below excessive noise situations.

For a given sense present, the voltage output of this circuit is:

Ideal for building ultra-low-power precision high-side current sensing circuits are…

zero

A key metric for a current-sense resolution is the zero level, or the output-referred-to-input equal error present that outcomes when no sense present is current. The zero is often the amplifier’s enter offset voltage divided by RSENSEDetermine. The low enter offset voltage of the LTC2063 is 1 µV typical, 5 µV most, and the low enter bias and offset currents are 1 pA to three pA typical, leading to a typical input-referred zero error present of solely 10 µA ( 1 µV/0.1 Ω), 50 µA (5 µV/0.1 Ω) most. This low error permits the detection circuit to keep up its linearity all the way down to the minimal present (100 µA) in its specified vary, with out lack of decision leading to a set offset worth within the low vary leading to linearity flattened (as proven in Determine 2). The ensuing enter present versus output voltage curve is linear over the whole present sensing vary.

Ideal for building ultra-low-power precision high-side current sensing circuits are…
Determine 2. No Mounted Offset Worth on Low Facet, ISENSEMay be as little as 100 µA.

One other supply of zero error is the drain present or IDSS of the output PMOS at zero gate voltage, i.e. the PMOS is nominally off (|VGS| = 0) exists at a non-zero VDSparasitic currents on. with excessive IDSSleakage present of the MOSFET within the absence of ISENSEwill produce a non-zero optimistic V whenOUTworth.

The transistor used on this design is Infineon’s BSP322P, which operates at |VDS| = I at 100 VDSS The higher restrict is 1 µA. Typical I of the BSP322P on this softwareDSS To make an affordable estimate, at room temperature and VDS=

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