Infineion FZ1600R17KF6C_B2 IGBT Module
Infineion FZ1600R17KF6C_B2 IGBT Module
Posted Date: 2023-06-23
The Infineon FZ1600R17KF6C_B2 is an IGBT (Insulated Gate Bipolar Transistor) module. Listed below are the specs of the module:
- Producer: Infineon
- Mannequin: FZ1600R17KF6C_B2
- IGBT Sort: Excessive Energy
- Most Collector-Emitter voltage (Vces): 1600V
- Gate-Emitter voltage (VGES): ±20V
- Collector Present (IC): 1600A
- Collector Present – Pulsed (Icp): 3200A
- Collector Energy Dissipation (Laptop): 1250W
- Collector-Emitter Voltage (VCES): 4000V
- Working Junction Temperature (Tj): +150°C
- Storage Temperature Vary (Tstg): -40°C to +125°C
- Mounting Screw Torque: 8-10 N·m
- Weight: Roughly 1050g
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