Infineon BSM300GB120DLC IGBT Module
Infineon BSM300GB120DLC IGBT Module
Posted Date: 2023-06-11
The BSM300GB120DLC is an IGBT (Insulated Gate Bipolar Transistor) module manufactured by Infineon. Listed below are the specs supplied:
- Producer: Infineon
- Product Class: IGBT Modules
- Model: Infineon Applied sciences
- Product: IGBT Silicon Modules
- Configuration: Twin
- Collector-Emitter voltage (VCEO Max): 1200 V
- Collector-Emitter Saturation voltage: 2.1 V
- Steady Collector Present at 25°C: 300 A
- Gate-Emitter Leakage Present: 400 nA
- Energy Dissipation (Pd): 2500 W
- Bundle/Case: 62 mm
- Most Working Temperature: +125°C
- Packaging: Tray
- Most Gate Emitter Voltage: +/- 20 V
- Minimal Working Temperature: -40°C
- Mounting Fashion: Screw
- Manufacturing unit Pack Amount: 10
These specs present details about the voltage and present rankings, energy dissipation, temperature vary, package deal dimension, and different related particulars for the BSM300GB120DLC IGBT module.
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