Infineon BSM30GP60 IGBT Module

The BSM30GP60 is an IGBT (Insulated Gate Bipolar Transistor) module manufactured by Infineon. Listed below are the specs and particulars for the BSM30GP60 module:

• Producer: Infineon
• Product Class: IGBT Modules
• RoHS: Sure (compliant with the Restriction of Hazardous Substances directive)
• Product: IGBT Silicon Modules
• Configuration: Hex (six IGBTs within the module)
• Collector-Emitter voltage VCEO Max: 600 V (most voltage that may be utilized throughout the collector and emitter)
• Collector-Emitter Saturation Voltage: 2.45 V (voltage drop throughout the collector and emitter when the IGBT is absolutely on)
• Steady Collector Present at 25°C: 50 A (most present that may movement by way of the collector)
• Gate-Emitter Leakage Present: 300 nA (present that leaks between the gate and emitter when the IGBT is turned off)
• Most Working Temperature: +125°C (highest temperature at which the module can safely function)
• Package deal/Case: EconoPIM2 (particular package deal fashion of the module)
• Most Gate-Emitter Voltage: +/- 20 V (most voltage that may be utilized between the gate and emitter)
• Minimal Working Temperature: -40°C (lowest temperature at which the module can safely function)
• Mounting Type: Screw (technique of attaching the module to a warmth sink or mounting floor)
• Pd – Energy Dissipation: 180 W (most energy that the module can dissipate with out exceeding its temperature limits)