Infineon BSM50GP120 IGBT Module
Infineon BSM50GP120 IGBT Module
The Infineon BSM50GP120 is an IGBT (Insulated Gate Bipolar Transistor) module. Listed here are some key specs for this module:
Module Info:
- Half Quantity: BSM50GP120
- Bundle: 24EconoPIM3
- Configuration: Hex
- Pin Rely: 24
- Most Collector-Emitter Voltage: 1200V
- Most Steady Collector Present: 80A
- Most Gate-Emitter Voltage: ±20V
- Mounting: Screw
Producer: Infineon
Class: IGBT Module
This module is designed for high-power functions the place it is advisable management substantial voltage and present ranges. Its 1200V most collector-emitter voltage and 80A most steady collector present make it appropriate for varied industrial and energy electronics functions.
The “24EconoPIM3” bundle signifies a particular bundle kind for this module. The “Hex” configuration implies that it has a hexagonal form, which is perhaps related for mechanical issues in your utility.
Please observe that when utilizing IGBT modules like this one, it’s important to seek advice from the producer’s datasheet and tips for detailed electrical and thermal traits, in addition to correct utilization and mounting directions.
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