Infineon BSM50GX120DN2 IGBT Module

The Infineon BSM50GX120DN2 is an IGBT (Insulated Gate Bipolar Transistor) module manufactured by Infineon Applied sciences. IGBT modules are extensively utilized in energy electronics and are generally present in purposes reminiscent of motor drives, renewable vitality techniques, industrial tools, and energy provides.

Listed below are some key specs of the Infineon BSM50GX120DN2 IGBT module:

1. IGBT Score: The BSM50GX120DN2 module has a most voltage score of 1200 volts (V). This voltage score determines the utmost voltage the module can deal with throughout operation.
2. Present Score: The module has a present score of fifty amperes (A). This score signifies the utmost present that may stream via the module.
3. Switching Frequency: The BSM50GX120DN2 is designed to function at excessive switching frequencies. The precise switching frequency will depend upon the appliance and the driving circuitry used.
4. Package deal Sort: The module is packaged in an influence module housing, which incorporates the IGBT chips, freewheeling diodes, and different vital elements. The package deal sort for this module is a half-bridge configuration.
5. Thermal Administration: Correct thermal administration is important for the dependable operation of energy modules. The BSM50GX120DN2 module incorporates options reminiscent of a baseplate for environment friendly warmth dissipation and thermal sensors for temperature monitoring.
6. Safety Options: The module consists of numerous safety options to make sure secure operation, reminiscent of overcurrent safety, overtemperature safety, and short-circuit safety.