Infineon DDB6U104N16RR IGBT Module
Infineon DDB6U104N16RR IGBT Module
Posted Date: 2023-06-08
The Infineon DDB6U104N16RR is an influence Transistor module. Listed here are the utmost rankings and traits for this module:
Absolute most rankings (Tc=25°C until in any other case specified):
product model：Infineon
Collector-emitter voltage: VCES = 1600 V (TVj = 25°C)
Steady DC collector present: 50 A
Repetitive peak collector present: ICRM = 100 A
Complete energy dissipation: Ptot = 350 W
Gate-emitter peak voltage: VGES = +/- 20 V
Temperature beneath switching circumstances: TVj op -40~150°C
These rankings point out the utmost values that the module can deal with beneath particular working circumstances. It’s necessary to make sure that the machine stays inside these limits to keep up its correct functioning and reliability.
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