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Infineon F3L150R07W2E3_B11 IGBT Module

Infineon F3L150R07W2E3_B11 IGBT Module

Posted Date: 2023-06-16
Infineon F3L150R07W2E3_B11 IGBT Module
Infineon F3L150R07W2E3_B11 IGBT Module
Infineon F3L150R07W2E3_B11 IGBT Module
Infineon F3L150R07W2E3_B11 IGBT Module
Infineon F3L150R07W2E3_B11 IGBT Module
Infineon F3L150R07W2E3_B11 IGBT Module

The F3L150R07W2E3_B11 IGBT module has varied typical purposes, electrical options, and most rated values. Right here’s the data based mostly on the supplied specs:
Typical Functions:
3-Stage Functions: The module is appropriate to be used in 3-level purposes, which contain multi-level energy conversion and management.
Photo voltaic Functions: It may be utilized in solar energy programs for environment friendly vitality conversion and energy management.
UPS Techniques: The module finds purposes in Uninterruptible Energy Provide (UPS) programs, making certain steady energy supply throughout outages.
Electrical Options:
Elevated Blocking voltage Functionality: The module can deal with blocking voltages as much as 650V, offering enhanced voltage safety.
Low Inductive Design: It includes a low inductance design, decreasing electromagnetic interference and enhancing efficiency.
Low Switching Losses: The module minimizes vitality losses throughout switching operations, enhancing total effectivity.
Low VCEsat: The collector-emitter saturation voltage is saved low, optimizing energy conversion effectivity.
Most Rated Values (Tvj = 25°C until in any other case specified):
Collector-Emitter Voltage (Vces): 650V at Tvj = 25°C
Steady DC Collector Present (IC): 150A at TC = 25°C, Tvj max = 175°C
Repetitive Peak Collector Present (Icp): 300A for tP = 1ms
Complete Energy Dissipation (Ptot): 335W at TC = 25°C, Tvj max = 175°C
Gate-Emitter Peak Voltage (VGES): ±20V
Temperature underneath Switching Situations (Tvj op): -40 to 150°C
Storage Temperature (Tstg): -40 to 125°C
Weight: 39g