Infineon F4-100R12KS4 IGBT Module
Infineon F4-100R12KS4 IGBT Module
Posted Date: 2023-06-23
The Infineon F4-100R12KS4 is an IGBT (Insulated Gate Bipolar Transistor) module. Listed below are the specs of the module:
- Producer: Infineon
- Mannequin: F4-100R12KS4
- Most Collector-Emitter voltage (VCES): 1200V
- Steady DC Collector Present (IC nom): 100A
- Repetitive Peak Collector Present (ICRM): 200A (for pulse length of 1ms)
- Whole Energy Dissipation (Ptot): 660W
- Gate-Emitter Peak voltage (VGES): ±20V
- Temperature Vary below switching circumstances (Tvj op): -40°C to 150°C
- Mounting Screw Torque: 3.0~6.0 N·m
- Weight: 300g
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