Infineon FF1200R16KF4 IGBT Module
Infineon FF1200R16KF4 IGBT Module
Posted Date: 2023-06-15
The Infineon FF1200R16KF4 is an IGBT (Insulated Gate Bipolar Transistor) module. Listed here are the specs for this module:
Options:
- Excessive efficiency IGBT expertise
- Low saturation voltage
- Constructive temperature coefficient for simple paralleling
- Excessive short-circuit functionality
- Built-in temperature sensor
- Excessive reliability and ruggedness
Most Rankings and Traits (Tc=25°C except specified):
- Collector-Emitter voltage Vces: 1600V
- Gate-Emitter voltage VGES: ±20V
- Collector present IC: 1200A
- Collector present Icp: 2400A
- Collector energy dissipation Laptop: 3600W
- Collector-Emitter voltage VCES: 2200V
- Working junction temperature Tj: -40 to +150°C
- Storage temperature Tstg: -40 to +125°C
- Weight: 620g
Please observe that the knowledge supplied is predicated on the specs you supplied for the Infineon FF1200R16KF4 IGBT module.
latest Update
- T-Mobile will start automatically moving some customers to pricier plans
- Nvidia’s Jensen Huang tops “most popular CEOs” survey, check out the best and worst approval ratings
- Google recently mitigated the largest DDoS attack ever, peaking at 398 million requests per second
- Illuminating errors creates a new paradigm for quantum computing
- Alternative method cuts time for computer simulation of absorption spectrum from days to hour
- MYTH #2: e-mode devices have no Qrr
- AI energy demands could soon match the entire electricity consumption of Ireland
- Self-healing phone screens could be here by 2028
- Increased power density for POL converters with smallest buck regulator modules
- New 800V N-channel depletion mode MOSFET supplied in modified SOT-223-2L package