Infineon FF150R12KS4 IGBT Module

the Infineon FF150R12KS4 is a twin IGBT module from Infineon Applied sciences. This IGBT module falls below the product class of IGBT Modules. Listed below are some key specs and options of the FF150R12KS4 IGBT module:

• Producer: Infineon
• RoHS: YES (compliant with RoHS laws)
• Product: IGBT Silicon Modules
• Configuration: Twin
• Collector-Emitter Voltage (VCEO Max): 1200 V
• Collector-Emitter Saturation Voltage: 3.2 V
• Steady Collector Present at 25°C: 225 A
• Gate-Emitter Leakage Present: 400 nA
• Energy Dissipation (Pd): 1.25 kW
• Bundle / Case: 62 mm
• Most Working Temperature: +125°C
• Model: Infineon Applied sciences
• Peak: 30.5 mm
• Size: 106.4 mm
• Most Gate Emitter Voltage: +/- 20 V
• Minimal Working Temperature: -40°C
• Mounting Type: Screw
• Manufacturing unit Pack Amount: 10
• Width: 61.4 mm

This IGBT module is designed for high-frequency switching and options the next attributes:

• Excessive brief circuit functionality
• Self-limiting brief circuit present
• Low switching losses
• Unbeatable robustness
• VCEsat with optimistic temperature coefficient
• Bundle with CTI > 400
• Excessive creepage and clearance distances
• Remoted base plate
• Copper base plate
• Commonplace housing

These options contribute to the pliability, optimum electrical efficiency, and excessive reliability of the module.