Infineon FF200R12KT4 IGBT Module

Infineon FF200R12KT4 IGBT Module – Excessive Energy and voltage Dealing with Functionality

The Infineon FF200R12KT4 is a sturdy IGBT module designed to supply excessive energy and voltage dealing with capabilities for varied functions. With a collector-emitter voltage (VCES) score of 1200V, this module can successfully deal with excessive voltage ranges, making certain dependable operation in demanding environments.

The continual DC collector present (IC) is rated at 200A, permitting for sustained energy supply. Moreover, the module can deal with repetitive peak collector currents (ICP) of as much as 400A, making it appropriate for functions with fluctuating energy calls for.

The overall energy dissipation (Ptot) of the FF200R12KT4 module is specified at 1100W when working at a case temperature (TC) of 25°C and a most junction temperature (Tvj) of 175°C. This ensures environment friendly energy administration and thermal stability throughout operation.

With a gate-emitter peak voltage (VGES) score of +/-20V, the module allows exact management and environment friendly switching. It may reliably function inside a large temperature vary from -40 to 150°C, permitting for versatile utility in numerous thermal situations.

The FF200R12KT4 IGBT module has compact dimensions, with a peak of 30.5mm and a size of 106.4mm. This makes it appropriate for installations with house constraints whereas sustaining excessive energy capabilities.

Infineon’s FF200R12KT4 IGBT module belongs to the N-CH 1.2KV and 200A~400A sequence of IGBT modules