Infineon FF300R12KE3G IGBT Module

The Infineon FF300R12KE3G is an IGBT (Insulated Gate Bipolar Transistor) module manufactured by Infineon Applied sciences. Listed here are the specs of the module:

• Product Class: IGBT Modules
• Producer: Infineon
• RoHS: Sure (compliance with RoHS directive)
• Configuration: Twin (consists of two IGBTs)
• Collector-Emitter voltage VCEO Max: 1200 V (most collector-emitter voltage)
• Collector-Emitter Saturation Voltage: 1.7 V (voltage drop throughout the collector-emitter when totally conducting)
• Steady Collector Present at 25 °C: 300 A (most steady collector present at 25 °C)
• Gate-Emitter Leakage Present: 400 nA (most leakage present between gate and emitter)
• Pd – Energy Dissipation: 1450 W (most energy dissipation)
• Bundle / Case: IS5a (62 mm)-7 (bundle kind)
• Most Working Temperature: +125 °C (most working temperature)
• Model: Infineon Applied sciences
• Peak: 30.9 mm (module top)
• Size: 106.4 mm (module size)
• Most Gate-Emitter Voltage: +/- 20 V (most gate-emitter voltage)
• Minimal Working Temperature: -40 °C (minimal working temperature)
• Mounting Fashion: Screw (methodology of mounting the module)
• Manufacturing facility Pack Amount: 10 (amount in manufacturing unit pack)
• Width: 61.4 mm (module width)