Infineon FF400R06KE3 IGBT Module

The Infineon FF400R06KE3 is an IGBT (Insulated Gate Bipolar Transistor) module designed for high-power switching purposes. It comes with particular most rankings and traits that make it appropriate for numerous industrial and energy management purposes. Listed below are the important thing specs and options of the FF400R06KE3 IGBT module:

Most Rankings and Traits:

• Collector-Emitter Voltage: 600V (at Tvj = 25°C, VCES), indicating the utmost voltage that may be utilized throughout the collector and emitter terminals of the IGBT underneath specified situations.
• Steady DC Collector Present: 400A, representing the utmost steady present that the IGBT can deal with.
• Repetitive Peak Collector Present: 800A (ICRM), indicating the utmost peak present that the IGBT can deal with in repetitive operation.
• Whole Energy Dissipation: 1250W (Ptot), specifying the utmost energy that may be dissipated by the module underneath specified working situations.
• Gate-Emitter Peak Voltage: +/-20V (VGES), representing the height voltage that may be utilized throughout the gate and emitter terminals.
• Temperature underneath Switching Circumstances: -40 to 150°C (Tvj op), defining the temperature vary at which the module can function throughout switching situations.
• Weight: 340g, indicating the burden of the IGBT module.

The FF400R06KE3 IGBT module is able to dealing with excessive voltage and present ranges, making it appropriate for demanding industrial purposes that require dependable energy switching and management. The low on-state voltage drop and excessive energy dissipation make it environment friendly for high-frequency switching purposes.