Infineon FF400R33KF2C IGBT Module

The Infineon FF400R33KF2C is a high-power twin IGBT module designed for traction and industrial functions. Listed below are the specs for the FF400R33KF2C IGBT module:

• Producer: Infineon Applied sciences
• Product: IGBT Silicon Modules
• Configuration: Twin
• Collector-Emitter voltage VCEO Max: 3300 V
• Collector-Emitter Saturation voltage: 3.4 V
• Steady Collector Present at 25°C: 660 A
• Gate-Emitter Leakage Present: 400 nA
• Pd – Energy Dissipation: 4.8 kW
• Bundle / Case: IHM (Built-in Half-Bridge Module)
• Minimal Working Temperature: -40°C
• Most Working Temperature: +125°C
• Packaging: Tray
• Peak: 38 mm
• Size: 140 mm
• Sequence: IGBT2
• Expertise: Si (Silicon)
• Width: 130 mm
• Model: Infineon Applied sciences
• Mounting Fashion: Chassis Mount
• Most Gate Emitter Voltage: 20 V
• Product Sort: IGBT Modules
• Manufacturing facility Pack Amount: 2
• Subcategory: IGBTs

The FF400R33KF2C module gives a excessive voltage score of 3300 V and a most collector present of 400 A. It options low collector-emitter saturation voltage, low gate-emitter leakage present, and excessive energy dissipation functionality. The module is designed for dependable and environment friendly operation in difficult environments.