Infineon FF800R17KE3 IGBT Module

Infineon / Mitsubishi / Fuji / Semikron / Eupec / IXYS

Infineon FF800R17KE3 IGBT Module

Posted Date: 2023-08-24
Infineon FF800R17KE3 IGBT Module

The Infineon FF800R17KE3 is an IGBT (Insulated Gate Bipolar Transistor) module. Beneath are the main points about this module:

  • Mannequin: FF800R17KE3
  • Operate: IGBT modules just like the FF800R17KE3 are important parts in energy electronics. They're used as energy switches and amplifiers in numerous purposes that require high-voltage and high-current dealing with capabilities.
  • Voltage and Present Scores:
    • Collector-Emitter Voltage (Vces): 1700V
    • Gate-Emitter Voltage (VGES): ±20V (typical worth)
    • Collector Present (Ic): 800A (Steady)
    • Collector Present (Icp): 1600A (Pulse, short-duration)
    • Collector-Emitter Voltage (VCES): 1700V (for transients)
  • Energy Dissipation:
    • Collector Energy Dissipation (Laptop): Not specified
  • Working Temperature:
    • Working junction temperature (Tj): As much as +150°C
  • Utility: The FF800R17KE3 module is designed to be used in numerous industrial purposes, together with motor drives, energy converters, and different programs that require excessive voltage and present dealing with capabilities.
  • Options: IGBT modules usually have options reminiscent of:
    • Excessive switching speeds
    • Excessive-voltage and present dealing with capabilities
    • Low saturation voltage
    • Overcurrent and overtemperature safety
    • Built-in gate driver circuitry