Infineon FP15R12KE3 IGBT Module

The Infineon FP15R12KE3 is an IGBT (Insulated Gate Bipolar Transistor) module manufactured by Infineon Applied sciences. This module is designed for numerous purposes that require environment friendly energy switching and management. Listed here are the important thing specs and particulars in regards to the FP15R12KE3 IGBT module:

• Producer: Infineon Applied sciences
• Description: IGBT Modules N-CH 1.2KV 27A
• Configuration: Hex
• Collector-Emitter Voltage (VCEO) Max: 1600 V
• Steady Collector Present at 25°C: 25 A
• Steady Collector Present at Rectifier Output (IRMSmax): 36 A
• Most Working Temperature: +125°C
• Package deal/Case: EASY2
• Most Gate-Emitter Voltage: +/- 20 V
• Whole Energy Dissipation at TC=25°C (Ptot): 89 W
• Minimal Working Temperature: -40°C
• Mounting Fashion: Screw
• Manufacturing unit Pack Amount: 20

The FP15R12KE3 module is designed to offer environment friendly energy switching capabilities for numerous purposes that require N-channel IGBT modules with a voltage score of 1.2 kV and present scores of 27 A and 15 A at 1200 V. It incorporates a hex configuration and is packaged in an EASY2 case. The module is appropriate to be used in several industries, providing dependable efficiency and excessive energy dissipation capabilities.