Infineon FP15R12KT3 IGBT Module

The Infineon FP15R12KT3 is an IGBT (Insulated Gate Bipolar Transistor) module designed for varied purposes. Listed below are the specs:

• Producer: Infineon
• Product Class: IGBT Modules
• RoHS: Sure (meets RoHS compliance)
• Model: Infineon Applied sciences
• Product: IGBT Silicon Modules
• Configuration: Hex (hexagonal form module)

Electrical Specs:

• Collector-Emitter voltage (VCEO Max): 1200 V This means the utmost voltage that may be utilized throughout the collector and emitter terminals.
• Steady Collector Present at 25°C: 25 A It specifies the utmost steady present that the module can deal with at 25 levels Celsius.
• Most Working Temperature: +125°C That is the utmost really useful temperature at which the module can function reliably.

Bundle and Mounting:

• Bundle/Case: Econo 2 The module is packaged within the Econo 2 package deal, which refers to its bodily housing.
• Packaging: Tray The modules are usually packaged in trays for defense throughout transportation and storage.
• Mounting Fashion: Screw The module is mounted utilizing screws for safe and dependable set up.

Different Specs:

• Most Gate-Emitter Voltage: +/- 20 V This parameter specifies the utmost voltage that may be utilized throughout the gate and emitter terminals of the IGBT module.
• Minimal Working Temperature: -40°C That is the minimal really useful temperature at which the module can function reliably.
• Manufacturing facility Pack Amount: 10 The modules are packed and offered in portions of 10 models per pack.
• IGBT: 15A1200V; IGBT Modules PIM Econo2B 1200V 15A This description signifies that the module accommodates an IGBT with a present ranking of 15A and voltage ranking of 1200V. The module follows the PIM (Energy Built-in Module) Econo2B normal.