Infineon FP35R12W2T4_B11 IGBT Module
Infineon FP35R12W2T4_B11 IGBT Module
Posted Date: 2023-06-15




The Infineon FP35R12W2T4_B11 is an IGBT (Insulated Gate Bipolar Transistor) module manufactured by Infineon Applied sciences. It's designed with particular options and is appropriate for numerous purposes. Listed here are the small print:
Options:
- Low VCE(sat): The module has a low saturation voltage (VCE(sat)), which helps in decreasing energy losses.
- Compact bundle: The module is designed in a compact bundle, permitting for space-efficient integration.
- P.C. board mount: It's appropriate for mounting on printed circuit boards.
- converter diode bridge, Dynamic brake circuit: The module can be utilized in purposes resembling diode bridge converters and dynamic brake circuits.
Purposes:
- Inverter for motor drive: Appropriate for motor drive inverters utilized in numerous purposes.
- AC and DC servo drive amplifier: Can be utilized in servo drive amplifiers for each AC and DC programs.
- Uninterruptible energy provide: The module is relevant in uninterruptible energy provide programs.
Most Rankings and Traits:
- Collector-Emitter voltage Vces: 1200V (The utmost voltage that may be utilized between the collector and emitter terminals)
- Gate-Emitter voltage VGES: ±20V (The utmost voltage that may be utilized between the gate and emitter terminals)
- Collector present IC: 35A (The utmost steady collector present)
- Collector present Icp: 70A (The utmost pulsed collector present)
- Collector energy dissipation Laptop: 215W (The utmost energy dissipation that the module can deal with)
- Collector-Emitter voltage VCES: 1200V (The utmost voltage that may be utilized between the collector and emitter terminals within the off-state)
- Working junction temperature Tj: +150°C (The temperature at which the module can function safely)
- Storage temperature Tstg: -40 to +125°C (The temperature vary for storing the module)
- Mounting screw torque: 3.5 * 1 N·m (The really helpful torque for mounting screws)
- Insulated Gate Bipolar Transistor 35A I(C) 1200V V(BR)CES N-Channel MODULE-35 (Module description)
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