Infineon FP75R12KE3 IGBT Module

The Infineon FP75R12KE3 is a high-performance IGBT module designed for numerous energy digital functions. It options the next specs:

Bundle: 24EconoPIM3 Configuration: Hex Pin Depend: 24

Key Specs:

Most Collector-Emitter voltage: 1200 V This parameter specifies the utmost voltage that may be utilized throughout the collector and emitter terminals of the IGBT module.

Most Steady Collector Present: 105 A It signifies the utmost quantity of present that may stream via the collector terminal constantly.

Most Gate-Emitter Voltage: ±20 V This parameter defines the utmost voltage that may be utilized throughout the gate and emitter terminals of the IGBT module.

Mounting: Screw The module is mounted utilizing screws for safe and dependable set up.

Class: IGBT Module The FP75R12KE3 is categorized as an IGBT module, which mixes the capabilities of an insulated gate bipolar Transistor (IGBT) and a diode.

Producer: Infineon AEMC REGIO N ASIA Infineon is a well known Semiconductor producer, and the FP75R12KE3 is produced by their regional subsidiary in Asia.

Trans IGBT Module N-CH 1.2KV 105A 24-Pin EconoPIM3 This description signifies that the module is a normally-on (N-channel) IGBT module with a most voltage score of 1.2 kV, a most present score of 105 A, and it has 24 pins within the EconoPIM3 package deal.