Infineon FP75R12KT4 IGBT Module
Infineon FP75R12KT4 IGBT Module
Collector-Emitter Voltage (Vces): 1200V
Gate-Emitter Voltage (VGES): ±20V
Collector Present (Ic) Steady at Tc = 25°C: 75A
Collector Present (Icp) 1ms at Tc = 25°C: 100A
Collector Energy Dissipation (Computer): 385W
Isolation Voltage (VIsol) (AC 1 minute): 2500V
Working Junction Temperature (Tj): +150°C
Storage Temperature (Tstg): -40 to +125°C
Mounting Screw Torque: 3.5 * 3 N·m
The FP75R12KT4 module is designed for top energy purposes, and it consists of IGBT and diode throughout the identical bundle. It may be utilized in varied energy electronics methods, together with motor drives, industrial inverters, and different high-power purposes.
As all the time, for particular technical particulars and operational tips, it’s essential to check with the producer’s datasheet or documentation.
latest Update
- T-Mobile will start automatically moving some customers to pricier plans
- Nvidia’s Jensen Huang tops “most popular CEOs” survey, check out the best and worst approval ratings
- Google recently mitigated the largest DDoS attack ever, peaking at 398 million requests per second
- Illuminating errors creates a new paradigm for quantum computing
- Alternative method cuts time for computer simulation of absorption spectrum from days to hour
- MYTH #2: e-mode devices have no Qrr
- AI energy demands could soon match the entire electricity consumption of Ireland
- Self-healing phone screens could be here by 2028
- Increased power density for POL converters with smallest buck regulator modules
- New 800V N-channel depletion mode MOSFET supplied in modified SOT-223-2L package