Infineon FP75R12KT4_B15 IGBT Module

The Infineon FP75R12KT4_B15 is an IGBT (Insulated Gate Bipolar Transistor) module manufactured by Infineon Applied sciences AG. Listed below are some particulars about this particular module:

Producer Half Quantity: FP75R12KT4_B15
Bundle Description: MODULE-27
Producer: Infineon
Case Connection: ISOLATED
Collector Present-Max (IC): 75 A
Collector-Emitter voltage-Max: 1200 V
Configuration: SINGLE
JESD-30 Code: R-XUFM-X27
Variety of Components: 1
Variety of Terminals: 27
Bundle Form: RECTANGULAR
Bundle Fashion: FLANGE MOUNT
Polarity/Channel Kind: N-CHANNEL
Floor Mount: NO
Terminal Type: UNSPECIFIED
Terminal Place: UPPER
Transistor Ingredient Materials: SILICON
Flip-off Time-Nom (toff): 160 ns
Flip-on Time-Nom (ton): 80 ns

The FP75R12KT4_B15 IGBT module is designed for high-power functions. It has a most collector present (IC) ranking of 75 A and a most collector-emitter voltage (VCE) ranking of 1200 V. The module is configured as a single IGBT ingredient.

The bundle type is a flange mount with 27 terminals, and it has an remoted case connection. The module options N-channel polarity/channel kind, indicating it's an N-channel IGBT. The transistor ingredient materials is silicon, which is often utilized in energy Semiconductor units.

The turn-off time (toff) is roughly 160 ns, whereas the turn-on time (ton) is roughly 80 ns. These values point out the switching pace of the module.