Infineon FS100R12KE3_B3 IGBT Module

The Infineon FS100R12KE3_B3 is an IGBT (Insulated Gate Bipolar Transistor) module manufactured by Infineon Applied sciences AG. Listed below are the main points of this particular module:

Producer Half Quantity: FS100R12KE3_B3 Bundle Description: MODULE-34 Producer: Infineon Case Connection: ISOLATED Collector Present-Max (IC): 140 A Collector-Emitter voltage-Max: 1200 V Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE JESD-30 Code: R-XUFM-X34 Variety of Components: 6 Variety of Terminals: 34 Bundle Form: RECTANGULAR Bundle Type: FLANGE MOUNT Polarity/Channel Sort: N-CHANNEL Floor Mount: NO Terminal Type: UNSPECIFIED Terminal Place: UPPER Transistor Component Materials: SILICON Flip-off Time-Nom (toff): 610 ns Flip-on Time-Nom (ton): 340 ns

This IGBT module is designed for high-power functions, providing a most collector present (IC) of 140 A and a most collector-emitter voltage (VCE) of 1200 V. It's configured as a bridge with 6 parts and consists of built-in diodes. The bundle fashion is a flange mount with 34 terminals, and it has an remoted case connection.

The module options N-channel polarity/channel sort, indicating it's an N-channel IGBT. The transistor aspect materials is silicon, which is often utilized in energy Semiconductor gadgets. The turn-off time (toff) is roughly 610 ns, whereas the turn-on time (ton) is roughly 340 ns.