Infineon FS35R12W1T4 IGBT Module

The Infineon FS35R12W1T4 is an IGBT (Insulated Gate Bipolar Transistor) module manufactured by Infineon Applied sciences. Listed here are the specs and options of the module:

Typical Functions:

• Air Conditioning
• Motor Drives
• Servo Drives
• UPS Programs

Electrical Options:

• Low Switching Losses
• Trench IGBT4
• Vcesat (Collector-Emitter Saturation voltage) with optimistic Temperature Coefficient
• Low VCEsat (Collector-Emitter Saturation voltage)

Mechanical Options:

• A12o3 Substrate with Low Thermal Resistance
• Compact design
• Solder Contact Expertise
• Rugged mounting as a result of built-in mounting clamps

Most Scores and Traits:

• Absolute most scores (Tc=25°C except specified in any other case)
  • Collector-Emitter voltage Vces: 1200V
  • Gate-Emitter voltage VGES: ±20V
  • Collector present IC: 35A
  • Collector present Icp: 70A
  • Collector energy dissipation Computer: 225W
  • Collector-Emitter voltage VCES: 2500V
  • Working junction temperature Tj: +150°C
  • Storage temperature Tstg: -40 to +125°C
• Weight: 24g

These specs present details about the module’s voltage, present, energy dissipation, temperature scores, weight, and different related particulars.