Infineon FZ600R17KE3 IGBT Module

The Infineon FZ600R17KE3 is a high-power IGBT (Insulated Gate Bipolar Transistor) module designed for industrial drives, wind generators, and huge motor management functions. It's a half-bridge module consisting of six IGBTs and 6 anti-parallel diodes.

Key options and specs of the FZ600R17KE3 module embrace:

• Most voltage: 1700V
• Most present: 600A
• IGBT know-how: Makes use of IGBT know-how for environment friendly energy dealing with and switching.
• Low-inductance design: Permits quick switching and excessive effectivity, significantly necessary in high-power functions.
• Warmth dissipation: Designed to be mounted with a warmth sink to dissipate warmth generated throughout operation.
• Three-Phase bridge circuit: Supposed to be used in Three-Phase bridge circuits.

Producer: Infineon Product: IGBT Silicon Modules Configuration: Twin Collector-Emitter voltage VCEO Max: 1700 V Collector-Emitter Saturation Voltage: 2.45 V Steady Collector Present at 25 C: 1070 A Gate-Emitter Leakage Present: 400 nA Pd – Energy Dissipation: 3150 W Bundle/Case: 62 mm Minimal Working Temperature: -40°C Most Working Temperature: +125°C Packaging: Tray Top: 36.5 mm Size: 106.4 mm Know-how: Si Width: 61.4 mm Mounting Model: Chassis Mount Most Gate Emitter Voltage: 20 V