IR-Peri MTC110A1800V IGBT Module

The supplied data describes Thyristor/Diode Module with the half quantity MTC110A1800V. the important thing particulars and specs:
Mechanical Description:
The module options glorious thermal efficiency achieved by the usage of an uncovered direct bonded copper substrate.
It makes use of a sophisticated compact package deal answer with a simplified inside construction and minimized interfaces.
Options:
Excessive voltage functionality
Industrial customary package deal
Low thermal resistance
Designed and certified for industrial-level functions
Glorious thermal efficiency attributable to the usage of uncovered direct bonded copper substrate
Excessive surge functionality
Simple mounting on heatsink
Purposes:
The module is meant for general-purpose excessive voltage functions, together with however not restricted to:
Excessive voltage regulated energy provides
Lighting circuits
Temperature and motor pace management circuits
UPS (Uninterruptible Energy Provides) and battery chargers
Absolute Most Rankings (Tj = 25°C except in any other case specified):
Collector-Emitter Voltage (VGE = 0V): 1800 Volts (VCES)
Gate-Emitter Voltage (VCE = 0V): ±20 Volts (VGES)
Collector Present (DC, TC = 125°C): 110 Amperes (IC)
Collector Present (Pulse, Repetitive): 220 Amperes (ICRM)
Isolation Voltage (Terminals to Baseplate, RMS, f = 60Hz, AC 1 minute): 2500 Volts (Visol)
Most Junction Temperature: 175°C (Tj(max))
Most Case Temperature: 125°C (TC(max))
Working Junction Temperature: -40 to +150°C (Tj(op))
Storage Temperature: -40 to +125°C (Tstg)
The module’s excessive voltage score, together with its glorious thermal efficiency and surge functionality, make it appropriate for numerous high-power functions the place sturdy and dependable efficiency is crucial.