IXYS VUO160-16NO7 IGBT Module
IXYS VUO160-16NO7 IGBT Module



The IXYS VUO160-16NO7 is an IGBT (Insulated Gate Bipolar Transistor) module manufactured by IXYS Company. IGBT modules are generally utilized in energy digital functions for high-power switching and management.
Listed below are some specs of the VUO160-16NO7 IGBT module:
Most voltage Score: 1600V
Present Score: 160A
Collector-Emitter voltage: 1600V
Collector Present: 160A
Most Energy Dissipation: 600W
Mounting Sort: Screw Terminal
Configuration: Single IGBT
The VUO160-16NO7 module is designed to deal with excessive voltages and currents with quick switching speeds. It combines the excessive enter impedance of a mosfet with the low saturation voltage of a bipolar Transistor.
The module usually consists of an IGBT, together with freewheeling diodes and protecting options, built-in right into a single bundle. It supplies a compact and environment friendly resolution for high-power functions, permitting for improved management and power effectivity.
It is very important be aware that the offered data relies on the given specs. For exact particulars and utility pointers, it is strongly recommended to seek advice from the producer’s datasheet or documentation.
latest Update
- T-Mobile will start automatically moving some customers to pricier plans
- Nvidia’s Jensen Huang tops “most popular CEOs” survey, check out the best and worst approval ratings
- Google recently mitigated the largest DDoS attack ever, peaking at 398 million requests per second
- Illuminating errors creates a new paradigm for quantum computing
- Alternative method cuts time for computer simulation of absorption spectrum from days to hour
- MYTH #2: e-mode devices have no Qrr
- AI energy demands could soon match the entire electricity consumption of Ireland
- Self-healing phone screens could be here by 2028
- Increased power density for POL converters with smallest buck regulator modules
- New 800V N-channel depletion mode MOSFET supplied in modified SOT-223-2L package