IXYS VUO50-08NO3 IGBT Module

The IXYS VUO50-08NO3 is an IGBT (Insulated Gate Bipolar Transistor) module with particular options and functions. Listed below are some key particulars about this module:

Options:

1. Packaging: The module is packaged with a DCB (Direct Copper Bonded) ceramic base plate.
2. Isolation Voltage: It affords an isolation voltage of 3600V~, which is necessary for security and stopping electrical interference.
3. Planar Passivated Chips: The module options planar passivated chips with a blocking voltage of as much as 1800V.
4. Low Ahead Voltage Drop: This means that it has low conduction losses when present flows by way of it.

Purposes:

1. Provides for DC Energy Gear: It may be utilized in energy provides for varied DC-powered units.
2. Enter Rectifiers for PWM Inverter: Utilized in functions the place PWM (Pulse Width Modulation) inverters are employed.
3. Battery DC Energy Provides: Appropriate for battery-based DC energy provide programs.
4. Rectifier for DC Motors Subject Present: Utilized in controlling the sphere present of DC motors.

Benefits:

1. Straightforward Mounting: It may be simply mounted with two screws, which simplifies set up.
2. House and Weight Financial savings: Its design permits for house and weight financial savings in comparison with another energy modules.
3. Improved Temperature and Energy Biking: It's designed to face up to temperature variations and energy biking.

Absolute Most Rankings (Tc=25°C until in any other case specified):

• Collector-Emitter Voltage (Vces): 900V
• Gate-Emitter Voltage (VGES): ±20V
• Collector Energy Dissipation (Computer): 1160W
• Collector-Emitter Voltage (VCES): 2500V
• Working Junction Temperature (Tj): +150°C
• Storage Temperature (Tstg): -40 to +125°C
• Mounting M5 Screw Torque: 2.5~3.5 N·m
• Weight (Typical): 50g
• Steady Collector Present (Idav) at TC=85°C: 58A