Low-spiking 100/80V mosfet range gets 8x8mm packaging

“The Qgate.Rds(on) figure-of-merit has lengthy been a spotlight for semiconductor producers aiming to enhance the effectivity of MOSFET switches,” in keeping with the corporate. “Nonetheless, relentlessly pushing this determine ever decrease has had the unintended consequence of accelerating spiking ranges when a MOSFET switches. Having recognized this as an rising concern, Nexperia started to analysis how modifying different course of expertise parameters would possibly assist to deal with it.”

The outcome was a sequence of 80 and 100V mosfets with decrease Qrr (reverse restoration cost) that cut back spiking throughout switching “whereas exhibiting the identical high-efficiency efficiency as competing mosfets”, it stated.

Initially they had been out there in Nexperia’s LFPAK56E, a 5 x 6mm SOT1023 bundle.

Now it has added choices within the marginally smaller LFPAK56 (SOT669) and the significantly bigger  LFPAK88 (SOT1235 8 x 8 x 1.6mm).

Choosing the 80V, 2.8mΩ, 190A PSMN2R8-80SSF at random, its 8 x 8mm bundle presents a most junction to mounting base resistance of 0.44K/W.

For reference, source-drain diode Qr (recovered cost) is 47nC (25A, -100 A/µs, 0Vgs, 40Vds)

The identical determine for the LFPAK56 (smaller 5 x 6mm) 100V, 11.8mΩ 65A PSMN012-100YSF is 1.16K/W (1.04 ok/W typ).

Supply-drain diode Qr (recovered cost) right here is 20nC (25A, -100 A/µs, 0Vgs, 50Vds, 25°C junction).

Purposes are foreseen in telecommunication, servers, business, chargers, USB-PD and motor management.

The entire 80V and 100V low-spiking household might be discovered right here