Mitsubishi BKO-NC1122-H03 IGBT Module
Mitsubishi BKO-NC1122-H03 IGBT Module
Posted Date: 2023-06-20
The Mitsubishi BKO-NC1122-H03 is an IGBT (Insulated Gate Bipolar Transistor) module manufactured by Mitsubishi Electrical. Listed below are the utmost scores and traits of this module:
Mannequin: BKO-NC1122-H03 Absolute Most Scores (Tc=25°C until in any other case specified):
- Collector-Emitter voltage (Vces): 600V
- Gate-Emitter voltage (VGES): ±20V
- Collector Present (IC): 150A
- Collector Present (Icp): 300A
- Collector Energy Dissipation (Computer): 1270W
- Collector-Emitter Voltage (VCES): 2200V
- Working Junction Temperature (Tj): +150°C
- Storage Temperature (Tstg): -40 to +125°C
- Mounting Screw Torque: 3.5 * 1 N·m
This IGBT module is rated for a most collector-emitter voltage of 600V and a most collector present of 150A. It has a collector energy dissipation of 1270W. The module is designed for high-power purposes and is able to working at excessive voltages as much as 2200V. The working junction temperature is specified as +150°C.
latest Update
- T-Mobile will start automatically moving some customers to pricier plans
- Nvidia’s Jensen Huang tops “most popular CEOs” survey, check out the best and worst approval ratings
- Google recently mitigated the largest DDoS attack ever, peaking at 398 million requests per second
- Illuminating errors creates a new paradigm for quantum computing
- Alternative method cuts time for computer simulation of absorption spectrum from days to hour
- MYTH #2: e-mode devices have no Qrr
- AI energy demands could soon match the entire electricity consumption of Ireland
- Self-healing phone screens could be here by 2028
- Increased power density for POL converters with smallest buck regulator modules
- New 800V N-channel depletion mode MOSFET supplied in modified SOT-223-2L package