Mitsubishi CM150E3U-12H IGBT Module

Primarily based on the offered info, the Mitsubishi CM150E3U-12H is an insulated-gate bipolar transistor (IGBT) module utilized in energy electronics purposes. Listed here are some key specs and options of the CM150E3U-12H module:

• Producer Half Quantity: CM150E3U-12H
• Producer: Mitsubishi ELECTRIC CORP
• Bundle Description: FLANGE MOUNT, R-XUFM-X5
• Extra Function: SUPER FAST RECOVERY
• Case Connection: ISOLATED
• Collector Present-Max (IC): 150 A
• Collector-Emitter Voltage-Max: 600 V
• Configuration: SINGLE WITH BUILT-IN DIODE
• Gate-Emitter Voltage-Max: 20 V
• JESD-30 Code: R-XUFM-X5
• Variety of Components: 1
• Variety of Terminals: 5
• Working Temperature-Max: 150 °C
• Bundle Physique Materials: UNSPECIFIED
• Bundle Form: RECTANGULAR
• Bundle Model: FLANGE MOUNT
• Polarity/Channel Sort: N-CHANNEL
• Energy Dissipation-Max (Abs): 600 W
• Subcategory: Insulated Gate BIP Transistors
• Floor Mount: NO
• Terminal Kind: UNSPECIFIED
• Terminal Place: UPPER

This IGBT module is designed to be used in switching purposes and consists of 1 IGBT with a reverse-connected super-fast restoration free-wheel diode and an anode-collector linked super-fast restoration free-wheel diode. All elements and interconnects are remoted from the warmth sinking baseplate, which simplifies system meeting and thermal administration.

The CM150E3U-12H module affords options reminiscent of low drive energy, low VCE(sat), discrete super-fast restoration free-wheel diode, high-frequency operation, and remoted baseplate for simple warmth sinking. It's generally utilized in motor drives, welding gear, energy converters, and different high-power purposes.