Mitsubishi CM150RL-12NF IGBT Module
Mitsubishi CM150RL-12NF IGBT Module





The Mitsubishi CM150RL-12NF is an IGBT (Insulated Gate Bipolar Transistor) module. Listed below are the utmost scores and traits of this module:
Most scores:
- Collector-Emitter voltage Vces: 600V
- Gate-Emitter voltage VGES: ±20V
- Collector present IC: 150A
- Collector present Icp: 300A
- Collector energy dissipation Laptop: 430W
- Collector-Emitter voltage VCES: 2500V
- Working junction temperature Tj: +150°C
- Storage temperature Tstg: -40 to +125°C
- Mounting M5 screw torque: 2.5~3.5 N·m
- Weight (Typical worth): 350g
These scores point out the utmost limits inside which the module can function safely and reliably. It's important to make sure that these specs should not exceeded throughout operation to stop harm to the module and guarantee its longevity.
The CM150RL-12NF module is designed for numerous purposes that require high-power switching, comparable to motor drives, inverters, and energy provides. With a rated collector present of 150A and a collector-emitter voltage of 600V, it may possibly deal with substantial energy ranges in these purposes.
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