Mitsubishi FM50DY-10 IGBT Module
Mitsubishi FM50DY-10 IGBT Module
Posted Date: 2023-08-02
The Mitsubishi FM50DY-10 is an influence field-effect transistor (FET) module with particular traits and specs. Right here’s the knowledge accessible:
Specs:
- Producer: Mitsubishi Electrical & Electronics USA, Inc.
- Half Quantity: FM50DY-10
- Description: Energy Subject-Impact Transistor, 50A I(D), 500V, 0.2ohm, 2-Component, N-Channel, Silicon, Steel-oxide Semiconductor FET
- Configuration: Sequence, 2 parts with built-in diode and resistor
- Drain Present-Max (ID): 50.0 A
- Drain-source On Resistance-Max: 0.2 ohm
- DS Breakdown Voltage-Min: 500.0 V
- FET Know-how: Steel-Oxide Semiconductor
- Variety of Components: 2.0
- Variety of Terminals: 7
- Working Mode: Depletion mode
- Bundle Physique Materials: Plastic/Epoxy
- Bundle Form: Rectangular
- Bundle Model: Flange mount
- Polarity/Channel Kind: N-Channel
- Pulsed Drain Present-Max (IDM): 150.0 A
- Qualification Standing: Not Certified
- Floor Mount: No
- Transistor Utility: Switching
- Transistor Component Materials: Silicon
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