Mitsubishi PM75CSE120 IGBT Module

Key Options of Mitsubishi PM75CSE120:

• Fourth Technology Planar IGBT Chip: Employs the newest 1μm wonderful rule course of for improved efficiency.
• Gentle Reverse Restoration Diode: Designed to ship smooth reverse restoration traits for enhanced effectivity.
• Monolithic Gate Drive & Safety Logic: Seamless integration of gate drive and safety logic.
• Detection & Safety Circuits: Geared up with circuits for over-current, short-circuit, over-temperature, and under-voltage safety.
• Silent Energy: Completely fitted to 11/15kW class inverter purposes, providing acoustic noise-less operation.

Specs and Traits (Tc=25°C except specified):

• Collector-Emitter Voltage Vces: 1200V
• Gate-Emitter Voltage VGES: ±20V
• Collector Present Ic: 75A
• Peak Collector Present Icp: 150A
• Collector Energy Dissipation Laptop: 416W
• Collector-Emitter Voltage VCES: 2500V
• Working Junction Temperature Tj: As much as +150°C
• Storage Temperature Tstg: Starting from -40°C to +125°C
• Mounting Screw Torque: Advisable 2.5~3.5 N·m
• Weight: Typical worth of 560g

Engineering Excellence:

• 4th Technology Planar IGBT Chip: Harness the ability of miniaturization and precision with the newest chip know-how.
• Effectivity Redefined: The smooth reverse restoration diode ensures environment friendly power administration, enhancing general system efficiency.
• Sturdy Safety: The built-in safety logic covers a spread of eventualities, guaranteeing operational security and reliability.
• Whisper-Quiet Energy: Acoustic noise-less operation makes it a game-changer for purposes demanding silent efficiency.

Advancing Industries: From motor drives to industrial inverters, the Mitsubishi PM75CSE120 is the driving drive behind high-performance purposes. Its mix of superior know-how, reliability, and effectivity makes it an integral part for industries looking for excellence.