INDUSTRIAL LCD DISPLAYS / IGBT MODULES DISTRIBUTOR

Infineon / Mitsubishi / Fuji / Semikron / Eupec / IXYS

Mitsubishi PN100RL1B060 IGBT Module

Mitsubishi PN100RL1B060 IGBT Module

Posted Date: 2023-06-20
Mitsubishi PN100RL1B060 IGBT Module
Mitsubishi PN100RL1B060 IGBT Module
Mitsubishi PN100RL1B060 IGBT Module
Mitsubishi PN100RL1B060 IGBT Module
Mitsubishi PN100RL1B060 IGBT Module

The Mitsubishi PN100RL1B060 is an IGBT (Insulated Gate Bipolar Transistor) module designed for high-power switching purposes. It's a part of the Mitsubishi Electrical Powerex IGBT module sequence.

Listed here are the specs and options of the PN100RL1B060 IGBT module:

  • Most Collector Present: 100A (steady)
  • Collector-Emitter voltage: 600V
  • Most Collector-Emitter Saturation voltage: 2.5V
  • Constructed-in quick circuit and overcurrent safety
  • Low loss IGBT for top effectivity

The PN100RL1B060 module is appropriate for numerous purposes corresponding to motor drives, energy provides, and inverters.

Listed here are the utmost rankings and traits of the Mitsubishi PN100RL1B060 IGBT module:

  • Absolute Most Scores (at Tc=25°C until in any other case specified):
    • Collector-Emitter Voltage (Vces): 600V
    • Gate-Emitter Voltage (VGES): ±20V
    • Collector Present (IC) (Tc=25°C): 100A
    • Collector Present (IC) (Tc=100°C): 75A
    • Collector Energy Dissipation (Laptop): 450W
    • Most Junction Temperature (Tj): +150°C
    • Storage Temperature (Tstg): -40 to +125°C