Mitsubishi QM15TB-H IGBT Module

The Mitsubishi QM15TB-H is a medium-power IGBT (Insulated Gate Bipolar Transistor) module designed for environment friendly energy switching in numerous functions. Listed here are the important thing specs and options of the QM15TB-H IGBT Module:

QM15TB-H Product Particulars:

Software:

• Medium Energy Switching

Sort:

• Insulated Sort

Specs:

• Collector Present (IC): 15A
• Collector-Emitter Voltage (VCEX): 1000V
• DC Present Acquire (hFE): 75

Most Scores and Traits (Tc=25°C until specified):

• Collector-Emitter Voltage (Vces): 1000V
• Gate-Emitter Voltage (VGES): ±20V
• Steady Collector Present (Ic) at Tc=80°C: 15A
• Peak Collector Present (Icp) for 1ms at Tc=80°C: 30A
• Collector Energy Dissipation (Laptop): 150W
• Isolation Voltage (VIsol) (AC 1 minute): 3400V
• Working Junction Temperature (Tj): +150°C
• Storage Temperature (Tstg): -40 to +125°C

Different Particulars:

• Mounting Screw Torque: 1.47~1.96 N·m
• Weight (Typical Worth): 230g

The Mitsubishi QM15TB-H IGBT module presents a medium-power resolution for environment friendly energy switching and management. With a collector present of 15A and a collector-emitter voltage ranking of 1000V, it's appropriate for numerous functions requiring dependable energy administration. Its insulated design enhances security and reliability in operation.